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专利名称：Integrated circuit comprising passive
isolation regions
发明人：Fukushima, Toshitaka申请号：EP82303304申请日：19820624公开号：EP0068828A3公开日：19860820
专利附图：
摘要：A semiconductor device includes therein a plurality of semiconductor elements(10). First passive isolation regions (11) formed parallel to a buried layer (15) and secondpassive isolation regions (12) formed perpendicularly thereto serve to isolate thesemiconductor elements from one another. The second passive isolation regions aredeepened adjacent to locations (25) at which they intersect the first passive isolationregion whereby any tendency for latchup to occur in the device is reduced.
申请人：FUJITSU LIMITED
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