专利内容由知识产权出版社提供
专利名称：STRONTIUM AND BARIUM PRECURSORS
FOR USE IN CHEMICAL VAPOR DEPOSITION,ATOMIC LAYER DEPOSITION AND RAPIDVAPOR DEPOSITION
发明人：Thomas M. Cameron,Chongying Xu申请号：US12672684申请日：20080803
公开号：US20100291299A1公开日：20101118
专利附图：
摘要：Cyclopentadienyl and Indenyl barium/strontium metal precursors and Lewis
base adducts thereof are described. Such precursors have utility for forming Ba- and/orSr-containing films on substrates, in the manufacture of microelectronic devices orstructures.
申请人：Thomas M. Cameron,Chongying Xu
地址：Newtown CT US,New Milford CT US
国籍：US,US
更多信息请下载全文后查看
