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®ISO 9001 RegisteredProcess C1027
BiCMOS 1.0µm
Low TC P-Poly Resistor
Electrical Characteristics
SymbolN-Channel High Voltage TransistorThreshold VoltageHVTNHVBVDSSNPunch Through VoltageON ResistanceHVPR0NOperating VoltageN-Channel Low Voltage TransistorThreshold VoltageVTNBody FactorγNConduction FactorβNEffective Channel LengthLeffNWidth Encroachment∆WNPunch Through VoltageBVDSSNPoly Field Threshold VoltageVTFPNSymbolP-Channel Low Voltage TransistorThreshold VoltageVTPBody Factorγ PConduction Factorβ PEffective Channel LengthLeffPWidth Encroachment∆WPBVDSSPPunch Through VoltagePoly Field Threshold VoltageVTFP(P)CapacitanceGate Oxide Metal-1 to Poly1Metal-2 to Metal-1 SymbolCOXCM1PCMMMinimum0.5025200Typical0.70240T=25oC Unless otherwise notedMaximumUnitComments0.90350VGS = 5VVDS = 20V1.050.9595.01.10VVΩV100x2.0µm0.650.7579.00.70814Minimum–1.250.424.00.72–8–14 Minimum0.850.8587.00.900.601318Typical–1.050.528.00.970.60–12–18Typical1.7270.0460.038VV1/2µA/V2µmµmVVUnitVV1/2µA/V2µmµmVVUnitfF/µm2fF/µm2fF/µm2100x1.0µm100x1.0µm100x100µm100x1.0µmPer sideMaximum–0.850.632.01.12Comments100x1.0µm100x1.0µm100x100µm100x1.0µmPer sideMaximumComments© IMP, Inc.25
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Process C1027Electrical CharacteristicsVertical NPN TransistorBetaEarly VoltageCut-Off FrequencyLateral PNPBetaEarly VoltageLow TCR P-Poly ResistorResistivityTCRSymbolhFEVANfτSymbolhFEVAPSymbolMinimum5030Typical100346.2Typical40TBDTypical2300Maximum150UnitComments4.5x4.5mmGHzMaximum100UnitVMaximum290+50UnitΩ/ppm/˚CCommentsCommentsMinimum10Minimum180–100Physical CharacteristicsDiffusion & Thin FilmsSymbolStarting Material p<100>Well (field) Sheet ResistanceρN-well(f)ρN+N+ Sheet ResistanceN+ Junction DepthxjN+ρP+P+ Sheet ResistanceP+ Junction DepthxjP+High-Voltage Gate Oxide ThHTGOXGate Oxide Thickness TGOXInterpoly Oxide ThicknessIρOXρPOLY1Gate Poly Sheet ResistanceρM1Metal-1 Sheet ResistanceρM2Metal-2 Sheet ResistancePassivation ThicknessTPASSMinimum250.6522.040.0Typical0.8037.00.4557.00.5020204738.045.025.0200+900Maximum501.1050.080.0UnitΩ-cmKΩ/Ω/µmΩ/µmnmnmnmΩ/mΩ/mΩ/nmCommentsn-well23.035.019.053.065.035.0oxide+nit.Layout RulesMin Channel WidthMin spacing, active region, 5VMin spacing, active region, 12VPoly1 (Gate) Width/SpacePoly2 Width/SpaceContact Width/SpaceMetal-1 Width/SpaceMetal-2 Width/SpaceVia Width/Space2.0µm1.2µm2.0µm1.0/1.4µm1.6/2.0µm1.2x1.2µm1.4/1.2µm1.8/1.4µm1.2/1.8µmContact to Poly SpaceContact Overlap of DiffusionContact Overlap of PolyMetal-1 Overlap of ContactMetal-1 Overlap of ViaMinimum Pad OpeningMinimum Pad to Pad SpacingMinimum Pad Pitch1.0µm1.0µm0.8µm0.8µm0.8µm65x65µm5.0µm80µm26C1027-4-98
