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专利名称：CIRCUIT SIMULATION DEVICE, CIRCUIT
SIMULATION METHOD, AND CIRCUITSIMULATION PROGRAM
发明人：Hideo SAKAMOTO申请号：US14922467申请日：20151026
公开号：US20160210386A1公开日：20160721
专利附图：
摘要：A circuit simulation device includes a measurement unit, a calculation unit, and aprocessing unit. The measurement unit measures first spaces between adjacent contacts
of a plurality of first contacts provided on a source diffusion layer in a line in a directionalong which a gate electrode of a transistor extends and also a space between adjacentcontacts of a plurality of second contacts provided on a drain diffusion layer in a line inthe direction, based on layout design data, and second spaces between the first contactsand the gate electrode and spaces between the second contacts and the gate electrode.The calculation unit calculates a fringe capacitance between the gate electrode, thesource diffusion layer, and the drain diffusion layer of the transistor, based on the firstand second spaces. The processing unit executes layout simulation based on the fringecapacitance of the transistor.
申请人：Renesas Electronics Corporation
地址：Tokyo JP
国籍：JP
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