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专利名称：Power device发明人：Craig McLachlan申请号：US09/330437申请日：19990611公开号：US06078077A公开日：20000620
摘要：A method for fabricating a field effect transistor using the supporting substrateas a device layer in accordance with the present invention comprises several steps. Tofabricate the field effect transistor, an epitaxial layer is grown on one surface of asubstrate having an opposing surface, the epitaxial layer forming a drain for thetransistor. Once the epitaxial layer is grown, the substrate is thinned to an appropriatedevice thickness and then a gate and a source for the transistor are formed on theopposing surface of the substrate. In an alternative embodiment, a polysilicon layer isused instead of the epitaxial layer. A field effect transistor fabricated from the methoddescribed above includes an epitaxial layer formed on one surface of a substrate havingan opposing surface, the epitaxial layer forming a drain for the transistor and a gate and asource for the transistor formed on the other surface of the substrate. Again, apolysilicon layer may be used instead of the epitaxial layer in the transistor.
申请人：INTERSIL CORPORATION
代理机构：Jaeckle Fleischmann & Mugel, LLP
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