元器件交易网www.cecb2b.com
SEMICONDUCTORTECHNICAL DATASWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRC660E~KRC6EEPITAXIAL PLANAR NPN TRANSISTORBFEATURES
With Built-in Bias Resistors.
Reduce a Quantity of Parts and Manufacturing Process.High Packing Density.
A1ACB1Simplify Circuit Design.
15DIMAA1B2EQUIVALENT CIRCUIT
C
B
R1EQUIVALENT CIRCUIT (TOP VIEW)54H34B1CDHJPMILLIMETERS_1.6 0.05+_+1.0 0.05_+1.6 0.05_+1.2 0.050.50_+0.2 0.05_+0.5 0.05_+0.12 0.055CPPQ1Q2E
1231. Q IN (BASE)12. Q , Q COMMON (EMITTER)123. Q IN (BASE)24. Q OUT (COLLECTOR)25. Q OUT (COLLECTOR)1TESVMAXIMUM RATING (Ta=25CHARACTERISTICCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector Current)SYMBOLVCBOVCEOVEBOICRATING50505100UNITVVVmACHARACTERISTICCollector Power DissipationJunction TemperatureStorage Temperature Range* Total Rating.SYMBOLPC *TjTstgRATING200150-55150UNITmWELECTRICAL CHARACTERISTICS (Ta=25CHARACTERISTICCollector Cut-off CurrentEmitter Cut-off Current DC Current GainCollector-Emitter Saturation VoltageTransition FrequencyKRC660EKRC661EInput Resistor KRC662EKRC663EKRC6ENote : * Characteristic of Transistor Only.)SYMBOLICBOIEBOhFEVCE(sat)fT *TEST CONDITIONVCB=50V, IE=0VEB=5V, IC=0VCE=5V, IC=1mAIC=10mA, IB=0.5mAVCE=10V, IC=5mAMIN.--120----R1---TYP.---0.12504.7101002247Type Name4JDMAX.100100-0.3------UNITnAnAVMHzkMarking5MARK SPECTYPEMARKKRC660ENKKRC661ENMKRC662ENNKRC663ENOKRC6ENP1232002. 7. 10Revision No : 31/4元器件交易网www.cecb2b.com
KRC660E~KRC6E
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTICKRC660EKRC661ERise TimeKRC662EKRC663EKRC6EKRC660EKRC661ESwitchingTimeStorage TimeKRC662EKRC663EKRC6EKRC660EKRC661EFall TimeKRC662EKRC663EKRC6Etftstg VO=5VVIN=5VRL=1ktrSYMBOLTEST CONDITIONMIN.---------------TYP.0.0250.030.30.060.113.02.06.04.05.00.20.122.00.91.4MAX.---------------SUNIT2002. 7. 10Revision No : 32/4元器件交易网www.cecb2b.com
KRC660E~KRC6E
h - IFEC
COLLECTOR-EMITTER SATURATINVOLTAGE VC E ( s (V)a t )2k
DC CURRENT GAIN hFE1k500
3001005030
V =5VCETa=100 CTa=25 CTa=-25 CKRC660EV - ICE(sat)C
210.50.3KRC660EI /I =20 CB0.10.050.030.010.1Ta=100 CTa=25 CTa=-25 C100.10.31310301000.3131030100COLLECTOR CURRENT I (mA)CCOLLECTOR CURRENT I (mA)Ch - IFECCOLLECTOR-EMITTER SATURATINVOLTAGE VC E ( s (V)a t )2k
DC CURRENT GAIN hFE1k500
3001005030
V =5VCETa=100 CTa=25 CTa=-25 CKRC661EV - ICE(sat)C210.50.30.10.050.030.010.1Ta=100 CTa=25 CTa=-25 CKRC661EI /I =20 CB10
0.10.31310301000.3131030100COLLECTOR CURRENT I (mA)CCOLLECTOR CURRENT I (mA)Ch - IFECCOLLECTOR-EMITTER SATURATINVOLTAGE VC E ( s a t ) (V)2k1k
DC CURRENT GAIN hFE500
3001005030
V =5VCETa=100 CTa=25 CTa=-25 CKRC662EV - ICE(sat)C210.50.30.10.050.030.01Ta=100 CTa=25 CTa=-25 CKRC662EI /I =20CB10
0.10.31310301000.10.3131030100
COLLECTOR CURRENT I (mA)C
COLLECTOR CURRENT I (mA)C
2002. 7. 10Revision No : 33/4元器件交易网www.cecb2b.com
KRC660E~KRC6E
h - IFEC
COLLECTOR-EMITTER SATURATINVOLTAGE VC E ( s (V)a t )2k
DC CURRENT GAIN hFE1k500
3001005030
V =5VCETa=100 CTa=25 CTa=-25 CKRC663EV - ICE(sat)C
210.50.30.10.050.030.01KRC663EI /I =20CBTa=100 CTa=25 CTa=-25 C100.10.31310301000.10.3131030100COLLECTOR CURRENT I (mA)CCOLLECTOR CURRENT I (mA)Ch - IFECCOLLECTOR-EMITTER SATURATINVOLTAGE VC E ( s (V)a t )2k
DC CURRENT GAIN hFE1k500
300100503010
V =5VCETa=100 CTa=25 CTa=-25 CKRC6EV - ICE(sat)C210.50.30.10.050.030.010.1
0.3
1
3
10
30
100
Ta=100 CTa=25 CTa=-25 CKRC6EI /I =20CB0.10.3131030100
COLLECTOR CURRENT I (mA)CCOLLECTOR CURRENT I (mA)C
2002. 7. 10Revision No : 34/4
