13003_DataSheet

SEMICONDUCTOR TECHNICAL DATA

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by MJE13002/D

Designer's™Data SheetSWITCHMODE Series

NPN Silicon Power Transistors

These devices are designed for high–voltage, high–speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220 V SWITCHMODE applications such as Switching Regulators, Inverters, MotorControls, Solenoid/Relay drivers and Deflection circuits.SPECIFICATION FEATURES:

•Reverse Biased SOA with Inductive Loads @ TC = 100_C•Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C

...tc @ 1 A, 100_C is 290 ns (Typ).•700 V Blocking Capability

•SOA and Switching Applications Information.

MAXIMUM RATINGSRatingSymbolMJE13002300600MJE13003400700UnitVdcVdcVdcAdcAdcAdcCollector–Emitter VoltageCollector–Emitter VoltageEmitter Base VoltageVCEO(sus)VCEVVEBOICICMIBIBMIEIEMPDPD9Collector Current—Continuous—Peak (1)Base Current—Continuous—Peak (1)1.530.751.52.254.51.411.240320Emitter Current—Continuous—Peak (1)Total Power Dissipation @ TA = 25_CDerate above 25_CWattsmW/_CWattsmW/_C_CTotal Power Dissipation @ TC = 25_CDerate above 25_COperating and Storage Junction Temperature RangeTJ, Tstg–65 to +150THERMAL CHARACTERISTICSCharacteristicSymbolRθJCRθJATLMaxUnitThermal Resistance, Junction to Case3.12_C/W_C/W_CThermal Resistance, Junction to AmbientMaximum Load Temperature for Soldering Purposes:1/8″ from Case for 5 Seconds275(1)Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limitcurves — representing boundaries on device characteristics — are given to facilitate “worst case” design.Preferred devices are Motorola recommended choices for future use and best overall value.Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

© Motorola, Inc. 1995Motorola Bipolar Power Transistor Device Data 1MJE13002 MJE13003ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicOFF CHARACTERISTICS (1)SymbolMinTypMaxUnitCollector–Emitter Sustaining Voltage(IC = 10 mA, IB = 0)MJE13002MJE13003VCEO(sus)Vdc300400——————————151Collector Cutoff Current(VCEV = Rated Value, VBE(off) = 1.5 Vdc)(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)Emitter Cutoff Current(VEB = 9 Vdc, IC = 0)ICEVmAdcIEBOmAdcSECOND BREAKDOWNSecond Breakdown Collector Current with bass forward biasedClamped Inductive SOA with base reverse biasedON CHARACTERISTICS (1)IS/bSee Figure 11See Figure 12RBSOADC Current Gain(IC = 0.5 Adc, VCE = 2 Vdc)(IC = 1 Adc, VCE = 2 Vdc)hFE85—————————4025—Collector–Emitter Saturation Voltage(IC = 0.5 Adc, IB = 0.1 Adc)(IC = 1 Adc, IB = 0.25 Adc)(IC = 1.5 Adc, IB = 0.5 Adc)(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)VCE(sat)Vdc———————0.5131Base–Emitter Saturation Voltage(IC = 0.5 Adc, IB = 0.1 Adc)(IC = 1 Adc, IB = 0.25 Adc)(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C)VBE(sat)Vdc11.21.1DYNAMIC CHARACTERISTICSCurrent–Gain — Bandwidth Product(IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz)Output Capacitance(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)Resistive Load (Table 1)Delay TimeRise TimefT41021——MHzpFCob—SWITCHING CHARACTERISTICStdtr————0.050.520.114µsµsµsµsStorage TimeFall Time(VCC = 125 Vdc, IC = 1 A,IB1 = IB2 = 0.2 A, tp = 25 µs,Duty Cycle v 1%)tstf0.40.7Inductive Load, Clamped (Table 1, Figure 13)Storage TimeCrossover TimeFall Time(IC = 1 A, Vclamp = 300 Vdc,IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100_C)tsvtctfi———1.74µsµsµs0.290.150.75—(1)Pulse Test: PW = 300 µs, Duty Cycle v 2%. 2Motorola Bipolar Power Transistor Device DataMJE13002 MJE13003VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)8060hFE, DC CURRENT GAIN403020–55°C1080.020.03VCE = 2 VVCE = 5 V0.20.30.50.70.050.070.1IC, COLLECTOR CURRENT (AMP)12 25°CTJ = 150°C2TJ = 25°C1.61.2IC = 0.1 A0.3 A0.5 A1 A1.5 A0.80.400.0020.0050.010.020.050.10.2IB, BASE CURRENT (AMP)0.512Figure 1. DC Current GainFigure 2. Collector Saturation Region1.41.2V, VOLTAGE (VOLTS)VBE(sat) @ IC/IB = 3VBE(on) @ VCE = 2 VV, VOLTAGE (VOLTS)0.350.30.250.20.150.1150°C0.050.50.71200.020.030.050.070.10.20.30.50.712 25°CIC/IB = 3TJ = –55°C1TJ = –55°C 25°C 25°C0.80.60.40.020.03150°C0.050.070.10.20.3IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)Figure 3. Base–Emitter VoltageFigure 4. Collector–Emitter Saturation Region104VCE = 250 VIC, COLLECTOR CURRENT (µA)103TJ = 150°C10210110025°C10–1–0.4REVERSEFORWARD0–0.2+0.2+0.4VBE, BASE–EMITTER VOLTAGE (VOLTS)+0.6125°C100°C75°C50°CC, CAPACITANCE (pF)5003002001007050302010750.10.2Cob0.52510205010020050010001VR, REVERSE VOLTAGE (VOLTS)CibTJ = 25°CFigure 5. Collector Cutoff RegionFigure 6. CapacitanceMotorola Bipolar Power Transistor Device Data 3MJE13002 MJE13003Table 1. Test Conditions for Dynamic PerformanceREVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHINGRESISTIVESWITCHING+5 V1N49330.001 µFTEST CIRCUITS5 VPWDUTY CYCLE ≤ 10%tr, tf ≤ 10 ns681 k+5 V1N49330.02 µFNOTEPW and VCC Adjusted for Desired ICRB Adjusted for Desired IB1CIRCUITVALUES2701 k2N2905471001/2 WMJE200–VBE(off)IBT.U.T.1 k33MJE210331N49332N2222RBVCC+125 VLMR826*Vclamp5.1 k51–4.0 V*SELECTED FOR ≥ 1 kVVCED1TUTRBSCOPERCICCoil Data:Ferroxcube Core #6656Full Bobbin (~200 Turns) #20GAP for 30 mH/2 ALcoil = 50 mHOUTPUT WAVEFORMSVCC = 20 VVclamp = 300 VdcVCC = 125 VRC = 125 ΩD1 = 1N5820 or Equiv.RB = 47 Ω+10.3 V25 µsTEST WAVEFORMSICIC(pk)tf CLAMPEDtt1tfVCEt1 Adjusted toObtain ICLcoil (ICpk)t1 ≈VCCt2 ≈Lcoil (ICpk)VclampTest EquipmentScope–Tektronics475 or Equivalent0–8.5 Vtr, tf < 10 nsDuty Cycle = 1.0%RB and RC adjustedfor desired IB and ICVCEorVclampTIMEt2tICPK90% VclamptrvtcVCEIB10% Vclamp90% IB1Vclamp90% ICtfiTable 2. Typical Inductive Switching PerformanceICAMP0.51TC_Ctsvµs1.31.61.51.71.83trvµstfiµsttiµstcµsICtsvtti2510025100251000.230.260.100.130.070.080.300.300.140.260.100.220.350.400.050.060.050.080.300.360.160.290.160.2810%ICPK2% IC1.5NOTE:All Data Recorded in the Inductive Switching Circuit in Table 1TIMEFigure 7. Inductive Switching Measurements 4Motorola Bipolar Power Transistor Device DataMJE13002 MJE13003SWITCHING TIMES NOTEIn resistive switching circuits, rise, fall, and storage timeshave been defined and apply to both current and voltagewaveforms since they are in phase. However, for inductiveloads which are common to SWITCHMODE power suppliesand hammer drivers, current and voltage waveforms are notin phase. Therefore, separate measurements must be madeon each waveform to determine the total switching time. Forthis reason, the following new terms have been defined.tsv = Voltage Storage Time, 90% IB1 to 10% Vclamptrv = Voltage Rise Time, 10–90% Vclamptfi = Current Fall Time, 90–10% ICtti = Current Tail, 10–2% ICtc = Crossover Time, 10% Vclamp to 10% ICAn enlarged portion of the inductive switching waveforms isshown in Figure 7 to aid in the visual identity of these terms.For the designer, there is minimal switching loss duringstorage time and the predominant switching power lossesoccur during the crossover interval and can be obtained us-ing the standard equation from AN–222:PSWT = 1/2 VCCIC(tc)fIn general, trv + tfi ] tc. However, at lower test currents thisrelationship may not be valid.As is common with most switching transistors, resistiveswitching is specified at 25_C and has become a benchmarkfor designers. However, for designers of high frequency con-verter circuits, the user oriented specifications which makethis a “SWITCHMODE” transistor are the inductive switchingspeeds (tc and tsv) which are guaranteed at 100_C.RESISTIVE SWITCHING PERFORMANCE210.70.5t, TIME (µs)0.30.20.10.070.050.030.020.020.03td @ VBE(off) = 5 VtrVCC = 125 VIC/IB = 5TJ = 25°Ct, TIME (µs)10753210.70.50.30.20.10.020.03tftsVCC = 125 VIC/IB = 5TJ = 25°C0.050.070.10.20.30.50.710200.050.070.10.20.30.50.712IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)Figure 8. Turn–On TimeFigure 9. Turn–Off Timer(t), EFFECTIVE TRANSIENT THERMALRESISTANCE (NORMALIZED)10.70.50.30.20.10.070.050.030.02D = 0.50.20.10.050.020.01SINGLE PULSE0.020.030.050.10.20.30.5ZθJC(t) = r(t) RθJCRθJC = 3.12°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) – TC = P(pk) RθJC(t)12351020t, TIME OR PULSE WIDTH (ms)50P(pk)t1t2DUTY CYCLE, D = t1/t210020050010000.010.01Figure 10. Thermal ResponseMotorola Bipolar Power Transistor Device Data 5MJE13002 MJE13003The Safe Operating Area figures shown in Figures 11 and 12 arespecified ratings for these devices under the test conditionsshown.10IC, COLLECTOR CURRENT (AMP)5210.50.20.10.050.020.015TC = 25°CTHERMAL LIMIT (SINGLE PULSE)BONDING WIRE LIMITSECOND BREAKDOWN LIMITCURVES APPLY BELOW RATED VCEOMJE13002MJE13003102050100200300VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)dc5.0ms1.0 ms100 µs10 µsSAFE OPERATING AREA INFORMATIONFORWARD BIASThere are two limitations on the power handling ability of atransistor: average junction temperature and second break-down. Safe operating area curves indicate IC – VCE limits ofthe transistor that must be observed for reliable operation;i.e., the transistor must not be subjected to greater dissipa-tion than the curves indicate.The data of Figure 11 is based on TC = 25_C; TJ(pk) isvariable depending on power level. Second breakdown pulselimits are valid for duty cycles to 10% but must be deratedwhen TC ≥ 25_C. Second breakdown limitations do not der-ate the same as thermal limitations. Allowable current at thevoltages shown on Figure 11 may be found at any case tem-perature by using the appropriate curve on Figure 13.TJ(pk) may be calculated from the data in Figure 10. Athigh case temperatures, thermal limitations will reduce thepower that can be handled to values less than the limitationsimposed by second breakdown.REVERSE BIAS500Figure 11. Active Region Safe Operating Area1.6IC, COLLECTOR CURRENT (AMP)1.2VBE(off) = 9 V0.8TJ ≤ 100°CIB1 = 1 AMJE13002MJE130030.45 V3 V001002003001.5 V400500600700800For inductive loads, high voltage and high current must besustained simultaneously during turn–off, in most cases, withthe base to emitter junction reverse biased. Under theseconditions the collector voltage must be held to a safe levelat or below a specific value of collector current. This can beaccomplished by several means such as active clamping,RC snubbing, load line shaping, etc. The safe level for thesedevices is specified as Reverse Bias Safe Operating Areaand represents the voltage–current conditions during re-verse biased turn–off. This rating is verified under clampedconditions so that the device is never subjected to an ava-lanche mode. Figure 12 gives RBSOA characteristics.VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)Figure 12. Reverse Bias Safe Operating Area10.8SECOND BREAKDOWNDERATINGPOWER DERATING FACTOR0.6THERMALDERATING0.40.2020406080100120140160TC, CASE TEMPERATURE (°C)Figure 13. Forward Bias Power Derating 6Motorola Bipolar Power Transistor Device DataMJE13002 MJE13003PACKAGE DIMENSIONS–B–UQF–A–MCNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.DIMABCDFGHJKMQRSUVINCHESMINMAX0.4250.4350.2950.3050.0950.1050.0200.0260.1150.1300.094 BSC0.0500.0950.0150.0250.5750.6555 TYP_0.1480.1580.0450.0550.0250.0350.1450.1550.040–––MILLIMETERSMINMAX10.8011.047.507.742.422.660.510.662.933.302.39 BSC1.272.410.390.6314.6116.635 TYP_3.7.011.151.390.0.883.693.931.02–––123HKVGSD2 PL0.25 (0.010)MJR0.25 (0.010)AMAMMBMBMSTYLE 3:PIN 1.BASE2.COLLECTOR3.EMITTERCASE 77–08TO–225AA TYPEISSUE VMotorola Bipolar Power Transistor Device Data 7MJE13002 MJE13003

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Motorola Bipolar Power Transistor Device Data